Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3427352
Reference18 articles.
1. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
3. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
4. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
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