Effects of substrate temperature on the electrical and physical properties of silicon dioxide films deposited from electron cyclotron resonant microwave plasmas-Reference-Cited by-同舟云学术

Effects of substrate temperature on the electrical and physical properties of silicon dioxide films deposited from electron cyclotron resonant microwave plasmas

Published:1990-05-15 Issue:10 Volume:67 Page:6347-6352
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Herak T. V.,Thomson D. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345155

Reference24 articles.

1. Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces

2. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition

3. Electrical characteristics of very thin SiO2deposited at low substrate temperatures

4. High-quality deposited gate oxide MOSFET's and the importance of surface preparation

5. Thin-film transistors incorporating a thin, high-quality PECVD SiO/sub 2/ gate dielectric

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