Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652241
Reference23 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Frontiers of silicon-on-insulator
3. Characterization of defects in Si and SiO2−Si using positrons
4. Increased Elemental Specificity of Positron Annihilation Spectra
5. Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si: experiments and first-principles calculations
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1. Positron annihilation studies of long range effect in Ar, N and C ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-02
2. Gettering of Cu in self-ion irradiated silicon studied by positron annihilation spectroscopy;Japanese Journal of Applied Physics;2019-08-08
3. Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si;Vacuum;2013-07
4. Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon;Physica B: Condensed Matter;2011-02
5. Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam;Japanese Journal of Applied Physics;2010-05-20
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