Giant photoluminescence enhancement in deuterated highly strained InAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112087
Reference6 articles.
1. Effect of strain on surface morphology in highly strained InGaAs films
2. Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties
3. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
4. Radiative decay of excitonic states in bulklike GaAs with a periodic array of InAs lattice planes
5. Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs
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1. Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si;Nano Letters;2016-10-06
2. Oscillator strengths for the intersubband transitions in GaAs/InGa1–As quantum wells and its strain dependence;Optik;2016-06
3. Peculiarities of the hydrogenated In(AsN) alloy;Semiconductor Science and Technology;2015-09-14
4. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01
5. H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots;Journal of Luminescence;2014-09
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