Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351296
Reference27 articles.
1. A New High-Electron Mobility Monolayer Superlattice
2. A comparison of the electronic properties of thin-period (InAs)(GaAs) and (InAs)(AlAs) superlattices with compositionally similar random alloys
3. (InAs)3(GaAs)1superlattice channel field‐effect transistor grown by molecular beam epitaxy
4. Valence band engineering in strained-layer structures
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