Optical properties of InAs quantum dots: Common trends
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.7620/fulltext
Reference35 articles.
1. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
2. Morphological stability of strained-layer semiconductors
3. Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium
4. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy
5. Origin of Self-Assembled Quantum Dots in Highly Mismatched Heteroepitaxy
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