Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories-Reference-Cited by-同舟云学术

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

Published:2014-08-11 Issue:6 Volume:105 Page:063504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao S.¹,Chen C.¹,Zhai Z.²,Liu H. Y.¹,Lin Y. S.¹,Li S. Z.¹,Lu S. H.¹,Wang G. Y.¹,Song C.¹,Zeng F.¹,Pan F.¹

Affiliation:

1. Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China

2. Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893277

Reference32 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Memristive devices for computing

3. Emerging memories: resistive switching mechanisms and current status