Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357174
Reference10 articles.
1. Stress in thermal SiO2during growth
2. Study of the composition of thin dielectrics grown on Si in a pure N2O ambient
3. General Relationship for the Thermal Oxidation of Silicon
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3. Bonding and band offset in N[sub 2]O-grown oxynitride;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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