Study of electrical and chemical profiles of Si implanted in semi‐insulating GaAs substrate annealed under SiO2and capless
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329042
Reference10 articles.
1. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
2. Redistribution of Cr during annealing of80Se‐implanted GaAs
3. Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si
4. Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs
5. Cr profiles in semi‐insulating GaAs after annealing with and without SiO2encapsulants in a H2‐As4atmosphere
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1. Capacitively coupled plasma-stimulated room-temperature Mg and Mn doping and electrical activation in GaAs;Applied Physics A;2019-03
2. Low-Energy Implantation of Si and Sn into GaAs;MRS Proceedings;1989
3. GaAs-Planartechnologie;GaAs-Feldeffekttransistoren;1989
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Comparison of low temperature and high temperature refractory metal/silicides self-aligned gate on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-11
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