Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1927687
Reference19 articles.
1. Growth and characterization of ultrathin nitrided silicon oxide films
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4. Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing
5. Impact of the interaction between nitrogen implant and NO anneal on narrow-width transistors
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1. (Invited) Issues with n-type Dopants in Germanium;ECS Transactions;2018-07-23
2. Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering;ECS Journal of Solid State Science and Technology;2017
3. Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation;ECS Solid State Letters;2015-04-21
4. Diffusion of implanted nitrogen in germanium;physica status solidi (c);2012-12-10
5. Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence;ECS Journal of Solid State Science and Technology;2012
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