Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1558965
Reference23 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Thermodynamic stability of binary oxides in contact with silicon
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
5. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
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