Charge propagation dynamics at trapping centers that induce the luminescence of rare-earth dopants in wide-gap materials
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3636393
Reference17 articles.
1. Direct experimental evidence for trap‐state mediated excitation of Er3+ in silicon
2. Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy
3. Excitation and temperature quenching of Er-induced luminescence ina-Si:H(Er)
4. Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region
5. Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation
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5. Roles of Electrons and Holes in the Luminescence of Rare-Earth-Doped Semiconductors;Electronics and Communications in Japan;2013-10-16
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