Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123076
Reference14 articles.
1. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
2. High efficiency and fast modulation of Er‐doped light emitting Si diodes
3. Erbium luminescence in doped amorphous silicon
4. Luminescence quenching in erbium‐doped hydrogenated amorphous silicon
5. Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm
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