Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125372
Reference13 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Quantum well lasers--Gain, spectra, dynamics
3. cw degradation at 300°K of GaAs double‐heterostructure junction lasers. II. Electronic gain
4. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
5. Gain characteristics of quantum dot injection lasers
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1. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser;Applied Physics Letters;2017-12-18
2. Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices;Journal of Applied Physics;2016-10-07
3. Direct and indirect capture of carriers into the lasing ground state and the light-current characteristic of quantum dot lasers;Journal of Applied Physics;2014-03-14
4. Nonequilibrum dynamics in the strongly excited inhomogeneous Dicke model;Physical Review B;2012-11-05
5. Self-assembled quantum-dot superluminescent light-emitting diodes;Advances in Optics and Photonics;2010-01-26
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