Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference34 articles.
1. D. Bimberg , M. Grundmann , and N. N. Ledentsov , Quantum Dot Heterostructures ( Wiley, New York, 1998), Chap. 8.
2. M. Sugawara , in Semiconductors and Semimetals, edited by M. Sugawara ( Acamedic, San Diego, CA, 1999), Vol. 60, Chap. 6.
3. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
4. Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers
5. Ultrafast carrier capture at room temperature in InAs∕InP quantum dots emitting in the 1.55μm wavelength region
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Excited States Transitions on Polarization Property of InAs/InP Quantum Dots;IEEE Journal of Quantum Electronics;2022-02
2. Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots;Japanese Journal of Applied Physics;2020-02-17
3. Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots;Journal of Applied Physics;2019-06-21
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