Ultrafast carrier capture at room temperature in InAs∕InP quantum dots emitting in the 1.55μm wavelength region
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1915527
Reference11 articles.
1. QUANTUM DOT OPTO-ELECTRONIC DEVICES
2. Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
3. Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers
4. All-optical switching due to state filling in quantum dots
5. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
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1. Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm;Applied Physics Letters;2018-05-28
2. Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices;Journal of Applied Physics;2016-10-07
3. Analysis of ground state spectral splitting of quantum dot lasers aimed for tunable terahertz generation;Journal of the Optical Society of America B;2016-09-23
4. Spectral and carrier transfer characteristics of1.55−μmInAs/InPcoupled-quantum-dot lasers;Physical Review A;2015-07-07
5. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
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