Characterization of an individual Si thin layer buried in GaAs (001) using Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349787
Reference27 articles.
1. Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE
2. Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
3. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
4. Characterization of GaAs grown on Si epitaxial layers on GaAs substrates
5. Raman study of an epitaxial GaAs layer on a Si [100] substrate
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1. Micro Raman analysis of MOCVD grown gallium nitride epilayers irradiated with light and heavy ions;Materials Chemistry and Physics;2012-02
2. Low temperature GaAs/Si direct wafer bonding;Electronics Letters;2000
3. Materials integration of gallium arsenide and silicon by wafer bonding;Applied Physics Letters;1998-06-15
4. Raman study of the nitrided GaAs thin layers;Physical Review B;1998-05-15
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