Materials integration of gallium arsenide and silicon by wafer bonding
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121586
Reference17 articles.
1. Silicon molecular beam epitaxy on gallium arsenide
2. Growth of Si/GaAs superlattices by molecular beam epitaxy
3. 60° dislocations in (001) GaAs/Si interfaces
4. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
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