High-performance polymer semiconductor-based ferroelectric transistor nonvolatile memory with a self-organized ferroelectric/dielectric gate insulator-Reference-Cited by-同舟云学术

High-performance polymer semiconductor-based ferroelectric transistor nonvolatile memory with a self-organized ferroelectric/dielectric gate insulator

Published:2021-01-18 Issue:3 Volume:118 Page:033301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Meili¹,Zhang Xindong¹,Qi Weihao¹,Li Shizhang¹,Wang Wei¹^ORCID

Affiliation:

1. College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0035321

Reference41 articles.

1. Ferroelectric Memories

2. Organic materials for printed electronics

3. High-performance solution-processed polymer ferroelectric field-effect transistors

4. Solution-Processed Flexible Organic Ferroelectric Phototransistor

5. All‐Solid‐State Organic Schmitt Trigger Implemented by Twin Two‐in‐One Ferroelectric Memory Transistors

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