Nonvolatile Memory Organic Light‐Emitting Transistors

Author:

Xu Meili1,Zhao Changbin1,Meng Zhimin1,Yan Hao1,Chen Hongming2,Jiang Zhixiang3,Jiang Zhuonan1,Chen Hong1,Meng Lingqiang1,Hui Wei3,Su Zhenhuang4,Wang Yueyue1,Wang Zhenhui1,Wang Jianing3,Gao Yuanhong1ORCID,He Yaowu1ORCID,Meng Hong1ORCID

Affiliation:

1. School of Advanced Materials Peking University Shenzhen Graduate School Peking University Shenzhen 518055 China

2. College of Materials Science and Engineering Fuzhou University Fuzhou 350116 China

3. Institute of Flexible Electronics Northwestern Polytechnical University Xi'an 710072 China

4. Shanghai Synchrotron Radiation Facility, Zhangjiang Lab, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201204 China

Abstract

AbstractIn the field of active‐matrix organic light emitting display (AMOLED), large‐size and ultra‐high‐definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light‐emitting transistor (Fe‐OLET) device which integrates the switching capability, light‐emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe‐OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof‐of‐concept device optimized through interfacial modification approach exhibits 20 times improved field‐effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light‐emitting capabilities within Fe‐OLET provides a promising internal‐storage‐driving paradigm, thus creating a new pathway for deploying storage capacitor‐free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on‐chip advanced display applications.

Funder

National Natural Science Foundation of China

Shenzhen Fundamental Research Program

Development and Reform Commission of Shenzhen Municipality

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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