Unraveling the origin of resistive switching behavior in organolead halide perovskite based memory devices
Author:
Affiliation:
1. Physics Laboratory, Industrial Training Center, Shenzhen Polytechnic, Shenzhen, Guangdong 518000, China
2. Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong, China
Funder
Shenzhen Polytechnic
Research Grants Council, University Grants Committee
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5130914
Reference49 articles.
1. An overview of resistive random access memory devices
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5. Ultrafast resistive switching in SrTiO3:Nb single crystal
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