Affiliation:
1. Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 Republic of Korea
2. Department of Electrical and Computer Engineering University of Southern California Los Angeles CA 90089 USA
3. Advanced Institute of Convergence Technology Seoul National University Suwon 16229 Republic of Korea
Abstract
AbstractThe current memory system is facing obstacles to improvement, and ReRAM is considered a powerful alternative. All‐inorganic α‐CsPbI3 perovskite‐based ReRAM working by electrochemical mechanism is reported, but the electrochemically active electrode raised difficulty in long‐term stable operation, and bulk α‐CsPbI3 device can not show resistive switching behavior with an inert metal top electrode. Herein, by making the α‐CsPbI3 into QDs and applying it to the device with inert Au as the top electrode, the devices working by valence change mechanism are successfully fabricated. The large surface‐to‐volume ratio made an abundant amount of iodine vacancies and facile migration of vacancies allowed the device to work by valence change mechanism. The devices show reliable electrical characteristics, 800 cycles endurance and retention for over 4 × 104 s, and air stability for 1 month. This work demonstrates that applying the QDs can improve the stability and enable a new type of working mechanism in ReRAM.
Funder
National Research Foundation of Korea