In‐plane effective mass of electrons in InGaAs/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358694
Reference11 articles.
1. Simple calculations of energy levels in quantum wells of lattice‐matched semiconductors with nonparabolic bands
2. Dependence on quantum confinement of the in-plane effective mass inGa0.47In0.53As/InP quantum wells
3. In‐plane effective mass in narrow quantum wells of nonparabolic semiconductors
4. In‐plane effective masses and quantum scattering times of electrons in narrow modulation‐doped InGaAs/InP quantum wells
5. Shubnikov-de Haas effect and effective mass inn-InP in dependence on carrier concentration
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1. The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells;Scientific Reports;2023-04-05
2. Enhanced Cooper-Pair Injection into a Semiconductor Structure by Resonant Tunneling;Physical Review Letters;2022-03-24
3. Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties;Journal of Applied Physics;2021-08-28
4. Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells;Journal of Applied Physics;2014-03-28
5. Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications;Current Applied Physics;2013-05
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