Dependence on quantum confinement of the in-plane effective mass inGa0.47In0.53As/InP quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.14052/fulltext
Reference25 articles.
1. A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InP
2. Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levels
3. Two-dimensional electron gas at a semiconductor-semiconductor interface
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