A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InP-Reference-Cited by-同舟云学术

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A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InP

Published:1987-09-01 Issue:9 Volume:2 Page:568-577
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hopkins M A,Nicholas R J,Pfeffer P,Zawadzki W,Gauthier D,Portal J C,DiForte-Poisson M A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Schottky-Barrier Electroreflectance: Application to GaAs

2. Magneto-optic transitions and non-parabolicity parameters in the conduction band of semiconductors

3. Electroreflectance at a Semiconductor-Electrolyte Interface

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2. Electron g-factor fluctuations in highly n-doped GaAs at high temperatures detected by ultrafast spin noise spectroscopy;physica status solidi (b);2016-12-05

3. Spin noise spectroscopy in semiconductors: from a billion down to single spins;SPIE Proceedings;2014-08-28

4. Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Largeg-Factor Fluctuations in Highly-n-Doped GaAs;Physical Review Letters;2013-10-29

5. Temperature dependence of the electron spin g factor in CdTe and InP;Journal of Applied Physics;2012-04-15

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