Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
Author:
Affiliation:
1. Department of Electrical and Computer Enginerring, Ben Gurion University, Beer Sheva 8410501, Israel
Funder
Israel Ministry of Defense
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5038800
Reference26 articles.
1. P. Yu and M. Cardona ,Fundamentals of Semiconductors: Physics and Materials Properties, 4th ed. ( Springer, Berlin, 2010),p. 265.
2. T. S. Moss , G. J. Burrell , and B. Ellis ,Semiconductor Opto-Electronics( Butterworths, London, 1973), p. 81
3. Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
4. Surface-induced effects in GaN nanowires
5. Surface photovoltage in undoped n-type GaN
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