Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817258
Reference30 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Localization and anticrossing of electron levels inGaAs1−xNxalloys
3. GaAs:N vs GaAs:B alloys: Symmetry-induced effects
4. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys
5. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing;Optical and Quantum Electronics;2024-07-05
2. Gaussian and Faddeeva broadening of the Franz-Keldysh oscillations at three-dimensional critical-points;Physica Scripta;2023-08-09
3. Simple and direct estimation method for split-off hole effective mass from Franz–Keldysh oscillations appearing in photoreflectance spectra: a feasibility study using GaAs epitaxial layer structures at room temperature;Semiconductor Science and Technology;2021-09-03
4. Electromodulation spectroscopy of highly mismatched alloys;Journal of Applied Physics;2019-10-14
5. Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization;Journal of Applied Physics;2018-08-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3