New nonstationary velocity overshoot phenomenon in submicron gallium arsenide field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356171
Reference12 articles.
1. Calculation of distribution functions by exploiting the stability of the steady state
2. Electron dynamics in short channel field-effect transistors
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4. AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICES
5. Two-dimensional hot-electron models for short-gate-length GaAs MESFET's
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2. Temperature and size effects on the oscillatory frequency of electron velocity in p-i-n GaAs semiconductor;Physics Letters A;2022-09
3. Investigation of velocity overshoot behavior in p-i-n GaAs semiconductor: The contribution of internal electric field;Physics Letters A;2019-07
4. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length;AIP Advances;2015-06
5. Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices;Journal of Applied Physics;2012-03
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