Investigation of velocity overshoot behavior in p-i-n GaAs semiconductor: The contribution of internal electric field
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference18 articles.
1. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transient drift velocity of photoexcited electrons in CdTe;Journal of Computational Electronics;2024-04-29
2. Effects of electric field and device size on the electron velocity in p-i-n GaAs semiconductor;Physics Letters A;2023-12
3. Temperature and size effects on the oscillatory frequency of electron velocity in p-i-n GaAs semiconductor;Physics Letters A;2022-09
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