Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4985627
Reference29 articles.
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2. Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance;Thin Solid Films;2024-02
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4. Flexible UV detectors based on in-situ hydrogen doped amorphous Ga2O3 with high photo-to-dark current ratio;Materials Futures;2024-01-18
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