Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867090
Reference8 articles.
1. Minamata Convention on Mercury: Report of United Nations Environment Programme, UNEP(DTIE)/Hg/INC5/7”, (2013).
2. AlGaN/GaN quantum well ultraviolet light emitting diodes
3. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
5. Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes;Journal of Materials Science: Materials in Electronics;2018-10-03
2. Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor;AIP Advances;2014-12
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