H-terminated diamond field effect transistor with ferroelectric gate insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953777
Reference26 articles.
1. Device properties of homoepitaxially grown diamond
2. High temperature, high voltage operation of diamond Schottky diode
3. High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance
4. Thermal conductivity of diamond between 170 and 1200 K and the isotope effect
5. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
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1. Insight into temperature impact of Ta filaments on high-growth-rate diamond (100) films by hot-filament chemical vapor deposition;Diamond and Related Materials;2021-10
2. Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3Gate Dielectrics;IEEE Access;2020
3. High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C;physica status solidi (a);2019-07-24
4. Key technologies for device fabrications and materials characterizations;Power Electronics Device Applications of Diamond Semiconductors;2018
5. Ohmic contact between iridium film and hydrogen-terminated single crystal diamond;Scientific Reports;2017-09-22
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