High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C-Reference-Cited by-同舟云学术

High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C

Published:2019-07-24 Issue:21 Volume:216 Page:1900244
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tabakoya Taira¹,Kanada Shohei¹,Wakui Yusuke¹,Takamori Yue¹,Yamada Tatsuki¹,Nagai Masatsugu¹,Kojima Yoshiyasu¹²,Ariyada Osamu³,Yamasaki Satoshi¹⁴,Nebel Christoph E.⁵,Matsumoto Tsubasa⁶,Inokuma Takao¹,Tokuda Norio⁶⁴^ORCID

Affiliation:

1. Graduate School of Natural Science and Technology Kanazawa University Kanazawa 920-1192 Japan

2. Technical Engineering Division Arios Incorporated Akishima 196-0021 Japan

3. Arios Incorporated Akishima 196-0021 Japan

4. Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305-8568 Japan

5. Fraunhofer Institute for Applied Solid State Physics Applied Solid State Physics IAF Freiburg 79108 Germany

6. Nanomaterials Research Institute Kanazawa University Kanazawa 920-1192 Japan

Funder

Japan Society for the Promotion of Science

Adaptable and Seamless Technology Transfer Program through Target-Driven R and D

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900244

Reference29 articles.

1. 1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C

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4. Diamond Schottky-pn diode using lightly nitrogen-doped layer

5. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

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