Annealing effects on InGaAsN∕GaAs quantum wells analyzed using thermally detected optical absorption and ten band k−p calculations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2719289
Reference20 articles.
1. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
4. Influence of composition diffusion on the band structures of InGaNAs∕GaAs quantum wells investigated by the band-anticrossing model
5. Anneal-induced interdiffusion in 1.3-μmGaInNAs∕GaAs quantum well structures grown by molecular-beam epitaxy
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2. Picowatt calorimeter for optical absorption spectroscopy;Review of Scientific Instruments;2020-12-01
3. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells;Journal of Applied Physics;2015-10-28
4. Broad gain spectra of single and multiple InGaAsN quantum well systems;physica status solidi (b);2009-06-12
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