Anneal-induced interdiffusion in 1.3-μmGaInNAs∕GaAs quantum well structures grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2150259
Reference19 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
3. The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
4. Thermodynamic analysis of the MBE growth of GaInAsN
5. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
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