The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=31/a=012/pdf
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1. Room temperature continuous-wave photopumped operation of 1.22 [micro sign]m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser
2. Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers
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4. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
5. (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
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