Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs-Reference-Cited by-同舟云学术

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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

Published:2009-09-30 Issue:12 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Herrera M.,Ramasse Q. M.,Morgan D. G.,Gonzalez D.,Pizarro J.,Yáñez A.,Galindo P.,Garcia R.,Du M.-H.,Zhang S. B.,Hopkinson M.,Browning N. D.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.125211/fulltext

Reference57 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Band Anticrossing in GaInNAs Alloys

4. Pseudopotential theory of dilute III V nitrides

5. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys

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2. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states;Solar Energy Materials and Solar Cells;2019-09

3. Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices;Applied Surface Science;2019-05

4. Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing;Applied Surface Science;2018-11

5. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications;Applied Surface Science;2018-06

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