Room temperature continuous-wave photopumped operation of 1.22 [micro sign]m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970636?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser
2. Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers
3. Low threshold, wafer fused long wavelength vertical cavity lasers
4. Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers
5. 1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors
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