Influence of composition diffusion on the band structures of InGaNAs∕GaAs quantum wells investigated by the band-anticrossing model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2138350
Reference21 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys
3. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
4. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
5. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
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3. Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells;SPIE Proceedings;2013-07-25
4. Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study;Semiconductor Science and Technology;2008-08-07
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