Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells-Reference-Cited by-同舟云学术

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Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells

Published:2013-07-25 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Dawidowski Wojciech,Ściana Beata,Latkowska Magdalena,Radziewicz Damian,Pucicki Damian,Bielak Katarzyna,Badura Mikołaj,Tłaczała Marek

Publisher

SPIE

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods;Journal of Crystal Growth;2022-07

2. Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques;Applied Surface Science;2018-03

3. The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics;Solid-State Electronics;2016-06

4. Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;2016-05-14

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