Temperature, detriment, or advantage for memory emergence: The case of ZnO
Author:
Affiliation:
1. Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP, Brazil
2. Instituto de Física e Química, Universidade Federal de Itajuba, Itajubá, MG, Brazil
Abstract
Funder
Conselho Nacional de Desenvolvimento CientÃ‐fico e TecnolÃgico
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0097470
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5. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film
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