Tuning the conductance topology in solids

Author:

Lopez-Richard Victor1ORCID,Wengenroth Silva Rafael Schio1ORCID,Lipan Ovidiu2ORCID,Hartmann Fabian3ORCID

Affiliation:

1. Physics Department, Federal University of São Carlos 1 , 13565-905 São Carlos, São Paulo, Brazil

2. Department of Physics, University of Richmond 2 , 28 Westhampton Way, Richmond, Virginia 23173, USA

3. 3 Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Abstract

The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with hysteresis in the current–voltage response and its eventual multiple crossing, produced by this universally available ingredient, are signatures of this process. Here, we deliver a microscopic and analytical solution for these behaviors, understood as the modulation of the topology of the current–voltage loops. Memory emergence thus becomes a characterization tool for intrinsic features that affect the electronic transport of solids such as the nature and number of trapping sites, intrinsic symmetry constraints, and natural relaxation time scales. This method is also able to reduce the seeming complexity of frequency-dependent electrochemical impedance and cyclic voltammetry observable for a variety of systems to a combination of simple microscopic ingredients.

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fulbright Program of the United Sates Department of State's Bureau of Educational and Cultural Affairs

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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