Hysteresis in memristors produces conduction inductance and conduction capacitance effects-Reference-Cited by-同舟云学术

Hysteresis in memristors produces conduction inductance and conduction capacitance effects

Published:2024 Issue:18 Volume:26 Page:13804-13813
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Bisquert Juan¹^ORCID,Roldán Juan B.²^ORCID,Miranda Enrique³

Affiliation:

1. Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain

2. Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain

3. Dept. Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallès, Spain

Abstract

Memristors display hysteresis effects in the form of self-crossing looping current–voltage curves. We show intrinsic dynamic inductor-like (conduction inductance) and capacitance-like (conduction capacitance) behaviours.

Funder

Ministerio de Ciencia e Innovación

H2020 European Research Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00586D

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