The Ubiquitous Memristive Response in Solids
Author:
Affiliation:
1. Department of Physics, Federal University of São Carlos, São Carlos, Brazil
2. Technische Physik, Physikalisches Institut, Würzburg, Germany
Funder
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior—Brasil
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09831111.pdf?arnumber=9831111
Reference30 articles.
1. Temperature, detriment, or advantage for memory emergence: The case of ZnO
2. Zinc Oxide Thin Films for Memristive Devices: A Review
3. Bidirectional Volatile Signatures of Metal–Oxide Memristors—Part I: Characterization
4. Emulating short-term synaptic dynamics with memristive devices
5. All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing
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