Erratum: Recording of cell action potentials with AlGaN∕GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)]-Reference-Cited by-同舟云学术

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Erratum: Recording of cell action potentials with AlGaN∕GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)]

Published:2006-07-03 Issue:1 Volume:89 Page:019901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Steinhoff Georg¹,Baur Barbara¹,Wrobel Günter²,Ingebrandt Sven²,Offenhäusser Andreas²,Dadgar Armin³,Krost Alois³,Stutzmann Martin¹,Eickhoff Martin¹

Affiliation:

1. Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany

2. Institut für Schichten und Grenzflächen ISG-2, Forschungszentrum Jülich, Leo-Brandt-Straße, D-52428 Jülich, Germany

3. Otto-von-Guericke Universität Madgeburg, Abteilung Halbleiterepitaxie, Postfach 4120, D-39016 Magdeburg, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference2 articles.

1. Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors

2. Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

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