Technology and Application Opportunities for SiC-FET Gas Sensors
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/5346_2011_5.pdf
Reference86 articles.
1. Lundström I, Shivaraman MS, Svensson C (1975) A hydrogen-sensitive MOS field effect transistor. J Appl Phys 26:55–57
2. Lundström I, Sundgren H, Winquist F, Eriksson M, Krantz-Rülcker C, Lloyd Spetz A (2007) Twenty-five year of field effect gas sensors research in Linköping. Sens Actuators B 121:247–262
3. Löfdahl M, Utaiwasin C, Carlsson A, Lundström I, Eriksson M (2001) Gas response dependence on gate metal morphology of field-effect devices. Sens Actuators B 80:183–192
4. Spetz A, Armgarth M, Lunström I (1988) Hydrogen and ammonia response of metal- silicon dioxide-silicon structures with thin platinum gates. J Appl Phys 64(3):1274–1283
5. Spetz A, Helmersson U, Enquist F, Armgarth M, Lundström I (1989) Structure and ammonia sensitivity of thin platinum or iridium gates in metal- oxide -silicon capacitors. Thin Solid Films 177:77–93
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of Cl- and N-doped MoS2 and WS2 coated on epitaxial graphene in gas-sensing applications;Surfaces and Interfaces;2021-08
2. Sol-gel synthesis of SiC@Y3Al5O12 composite nanopowder and preparation of porous SiC-ceramics derived from it;Materials Chemistry and Physics;2019-09
3. Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide;Journal of Sensors and Sensor Systems;2019-08-02
4. Polymer Technology of Porous SiC Ceramics Using Milled SiO2 Fibers;Russian Journal of Inorganic Chemistry;2018-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3