2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT
Author:
Funder
CAS
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/8/1.4894142.pdf?itemId=/content/aip/journal/adva/4/8/10.1063/1.4894142&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference16 articles.
1. 2.6 μm InGaAs photodiodes
2. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs
3. Extended wavelength InGaAs infrared (1.0–2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere
4. Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors
5. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators
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