Effect of temperature errors on accuracy of deep traps parameters obtained from transient measurements
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1149930
Reference8 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Deep‐level spectroscopy in high‐resistivity materials
3. Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
4. Admittance studies of neutron‐irradiated siliconp+‐ndiodes
5. Annealing of irradiation‐induced defects in arsenic‐doped silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis;Solid-State Electronics;2002-11
2. High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-01
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