Annealing of irradiation‐induced defects in arsenic‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323935
Reference12 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs
2. The Interactions of Point Defects with Impurities in Silicon
3. The role of oxygen in irradiated arsenic‐doped silicon
4. Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence
5. Electron‐irradiation damage in antimony‐doped silicon
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