Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1461429
Reference15 articles.
1. Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation
2. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
3. Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy
4. Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors
5. Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells
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